Emerging III-V Semiconductor Compound Materials for Future High-Speed and Low Power Applications: A Review and Challenges
نویسنده
چکیده
High mobility III–V semiconductors, along with high-k gate dielectrics, are projected to be key ingredients in future complementary metal–oxide–semiconductor technology. Among these, In0.53Ga0.47As has been intensively studied for their advantages in high electron mobility over their Si-based counterparts. In0.53Ga0.47As metal–oxide–semiconductor field-effect transistors (MOSFETs) have been demonstrated to provide large drive current density. In order to continue the scaling of silicon-based CMOS and maintain the historic progress in information processing and transmission, advanced device structures and advanced materials are required. A channel material with high mobility and therefore increase injection velocity can increase ON state current and reduces the delay. Currently, strained-Si technology is used for designing high performance MOSFETs. However, looking into future high mobility III-V materials can offer several advantages over even very highly strained Si.
منابع مشابه
Process Development and Characteristics of Nano III-V MOSFET
The compound semiconductor channel materials have recently drawn great attention because of their potential to solve the upcoming Si MOSFETs scaling problem and become the next generation high-speed, low-power devices. In this work we review the latest silicon technology and report the process development of submicron III-V MOSFETs. A new approach has been demonstrated to overcome the high inte...
متن کاملFuture of Heterostructure Microelectronics and Roles of Materials Research for Its Progress
With advent of the ubiquitous network era and due to recent progress of III-V nanotechnology, the present III-V heterostructure microelectronics will turn into what one might call III-V heterostructure nanoelectronics, and may open up a new future in much wider application areas than today, combining information technology, nanotechnology and biotechnology. Instead of the traditional top-down a...
متن کاملGermanium Based Field-Effect Transistors: Challenges and Opportunities
The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This...
متن کاملInterfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications
The prospect of enhanced device performance from III–V materials has been recognized for at least 50 years, and yet, relative to the phenomenal size of the Si-based IC industry, these materials fulfilled only specific niches and were often referred to as ‘‘the material of the future’’ [1]. A key restriction enabling widespread use of III–V materials is the lack of a high quality, natural insula...
متن کاملChallenges & Advances of Mosfets Using High Mobility Material Channels Novel Quantum-corrected Semi-classical Ensemble Monte Carlo Simulator for Nano-scale Iii-v In0.47ga0.53as Tri-gate Finfets Electron Devices & Applications I
Complementary MOSFET (CMOS) using high mobility materials using III-V and Ge channels are expected to be one of promising devices for high performance and low power advanced LSIs in the future under sub-10 nm regime, because of the enhanced carrier conduction properties. The advantages of MOSFETs using those materials can basically originate in the low effective mass, which leads to high inject...
متن کامل